EPC2015 – Enhancement Mode Power Transistor

eGaN® FET DATASHEET
EPC2015
EPC2015 – Enhancement Mode Power Transistor
VDSS , 40 V
RDS(ON) , 4 mW
ID , 33 A
NEW PRODUCT
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(ON), while its lateral device structure
and majority carrier diode provide exceptionally low QG and zero QRR. The end result is a device that
can handle tasks where very high switching frequency, and low on-time are beneficial as well as
those where on-state losses dominate.
Maximum Ratings
VDS
ID
VGS
TJ
TSTG
Drain-to-Source Voltage (Continuous)
40
V
Drain-to-Source Voltage (up to 10,000 5ms pulses at 125° C)
48
V
Continuous (TA = 25˚C, θJA = 13)
33
Pulsed (25˚C, Tpulse = 300 µs)
150
Gate-to-Source Voltage
6
Gate-to-Source Voltage
-5
Operating Temperature
-40 to 150
Storage Temperature
-40 to 150
PARAMETER
EPC2015 eGaN® FETs are supplied only in passivated die form with solder bars
Applications
• High Speed DC-DC conversion
• Class D Audio
• Hard Switched and High Frequency Circuits
A
Benefits
• Ultra High Efficiency
• Ultra Low RDS(on)
• Ultra low QG
• Ultra small footprint
V
˚C
TEST CONDITIONS
MIN
40
TYP
MAX
UNIT
Static Characteristics (TJ= 25˚C unless otherwise stated)
BVDSS
Drain-to-Source Voltage
VGS = 0 V, ID = 500 µA
IDSS
Drain Source Leakage
VDS = 32 V, VGS = 0 V
200
400
Gate-Source Forward Leakage
VGS = 5 V
1.5
7
Gate-Source Reverse Leakage
VGS = -5 V
0.3
1.5
VGS(TH)
Gate Threshold Voltage
VDS = VGS, ID = 9 mA
1.4
2.5
V
RDS(ON)
Drain-Source On Resistance
VGS = 5 V, ID = 33 A
3.2
4
mΩ
IGSS
0.7
V
µA
mA
Source-Drain Characteristics (TJ= 25˚C unless otherwise stated)
VSD
Source-Drain Forward Voltage
IS = 0.5 A, VGS = 0 V, T = 25˚C
1.75
IS = 0.5 A, VGS = 0 V, T = 150˚C
1.8
V
All measurements were done with substrate shorted to source.
Thermal Characteristics
TYP
RθJC
Thermal Resistance, Junction to Case
2.1
˚C/W
RθJB
Thermal Resistance, Junction to Board
15
˚C/W
RθJA
Thermal Resistance, Junction to Ambient (Note 1)
54
˚C/W
Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2013 |
| PAGE 1
eGaN® FET DATASHEET
EPC2015
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
1100
1200
575
750
UNIT
Dynamic Characteristics (TJ= 25˚C unless otherwise stated)
CISS
Input Capacitance
COSS
Output Capacitance
CRSS
Reverse Transfer Capacitance
60
70
QG
Total Gate Charge (VGS = 5 V)
10.5
11.6
QGD
Gate to Drain Charge
2.2
2.7
QGS
Gate to Source Charge
3
3.5
QOSS
Output Charge
18.5
22
QRR
Source-Drain Recovery Charge
0
0
VDS = 20 V, VGS = 0 V
VDS = 20 V, ID = 33 A
VDS = 20 V, VGS = 0 V
pF
nC
All measurements were done with substrate shorted to source.
Figure 1: Typical Output Characteristics
Figure 2: Transfer Characteristics
150
150
VGS = 5
VGS = 4
VGS = 3
VGS = 2
50
0
0
10
RDS(ON) – Drain to Source Resistance (mΩ)
ID – Drain Current (A)
100
0.5
1
1.5
VDS – Drain to Source Voltage (V)
Figure 3: RDS(on) vs VGS for Various Current
ID = 10 A
ID = 20 A
ID = 50 A
ID = 100 A
6
4
2
2
2.5
3
3.5
4
100
50
20
8
0
V DS = 3V
0
2
RDS(ON) – Drain to Source Resistance (mΩ)
ID – Drain Current (A)
25˚C
125˚C
4.5
VGS – Gate to Source Voltage (V)
5
5.5
0.5
1
1.5
1.6
2.5
3
3.5
4
4.5
Figure 4: RDS(on) vs VGS for Various Temperature
25˚C
125˚C
ID = 33 A
15
10
5
0
2
2.5
3
4.5
ID = 33 A
V = 20 V
3.5
4
4.5
VGS – Gate-to-Source Voltage (V)
Figure 5: Capacitance
Figure 6: Gate Charge
5
EPC –1.8EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT
2013 |
COSS = CGD + CSD
C = C +C
2
VGS – Gate-to-Source Voltage (V)
5
5.5
| PAGE 2
0
2
2.5
3
3.5
4
4.5
5
VGS – Gate to Source Voltage (V)
0
5.5
2
2.5
3
eGaN® FET DATASHEET
Figure 5: Capacitance
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
1.2
1
0.8
0.6
0.4
0.2
4
5.5
EPC2015
3.5
3
2.5
2
1.5
1
0.5
0
10
20
0
30
VDS – Drain to Source Voltage (V)
Figure 7: Reverse Drain-Source Characteristics
0
2
4
6
8
10
QG – Gate Charge (nC)
12
Figure 8: Normalized On Resistance Vs Temperature
3
Normalized On-State Resistance – RDS(ON)
25˚C
125˚C
ISD – Source to Drain Current (A)
5
ID = 33 A
VD = 20 V
4.5
VG – Gate to Source Voltage (V)
C – Capacitance (nF)
1.4
100
50
0
0.5
1
1.5
2
2.5
3
VSD – Source to Drain Voltage (V)
3.5
4
4.5
ID = 33 A
VGS = 5 V
2.5
2
1.5
1
0.5
-20
Figure 9: Normalized Threshold Voltage vs. Temperature
.025
1.2
IG – Gate Current (A)
1.05
1
40
60
80
100
TJ – Junction Temperature ( ˚C )
120
140
.015
.01
.005
0.95
0.9
-20
20
25˚C
125˚C
.02
1.1
0
Figure 10: Gate Current
ID = 9 mA
1.15
Normalized Threshold Voltage
4.5
5
1.6
150
4
Figure 6: Gate Charge
1.8
0
3.5
VGS – Gate-to-Source Voltage (V)
0
20
40
60
80
100
120
140
0
0
1
TJ – Junction Temperature ( ˚C )
2
3
4
5
6
VGS – Gate-to-Source Voltage (V)
All measurements were done with substrate shortened to source.
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2013 |
| PAGE 3
eGaN® FET DATASHEET
EPC2015
Figure 11: Transient Thermal Response Curves
Normalized Maximum Transient Thermal Impedance
ZθJB, Normalized Thermal Impedance
1
Duty Factors:
0.5
0.1 0.2
0.1
0.05
0.01 0.02
0.01
t1
Single Pulse
0.001
0.0001
PDM
10-5
10-4
t2
Notes:
Duty Factor: D = t1/t2
Peak TJ = PDM x ZθJB x RθJB + TB
10-3
10-2
10-1
1
10
100
tp, Rectangular Pulse Duration, seconds
Normalized Maximum Transient Thermal Impedance
ZθJC, Normalized Thermal Impedance
1
Duty Factors:
0.5
0.1 0.2
0.1
PDM
0.05
t1
0.01 0.02
0.01
Notes:
Duty Factor: D = t1/t2
Peak TJ = PDM x ZθJC x RθJC + TC
Single Pulse
0.001
t2
10-6
10-5
10-4
10-3
10-2
10-1
1
tp, Rectangular Pulse Duration, seconds
Figure 12: Safe Operating Area
100
I D- Drain Current (A)
10 µs
100 µs
10
limited by RDS(ON)
1 ms
10 ms
100 ms/DC
1
0.1
TJ = Max Rated, TC = +25°C, Single Pulse
0.1
1
10
100
VDS - Drain-Source Voltage (V)
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2013 |
| PAGE 4
eGaN® FET DATASHEET
EPC2015
TAPE AND REEL CONFIGURATION
4mm pitch, 12mm wide tape on 7” reel
b
e
d
g
f
Loaded Tape Feed Direction
Die
orientation
dot
7” reel
c
a
Gate
solder bar is
under this
corner
Die is placed into pocket
solder bar side down
(face side down)
EPC2015 (note 1)
Dimension (mm)
target
a
b
c (note 2)
d
e
f (note 2)
g
12.0
1.75
5.50
4.00
4.00
2.00
1.5
min
max
11.7 12.3
1.65 1.85
5.45 5.55
3.90 4.10
3.90 4.10
1.95 2.05
1.5
1.6
Note 1: MSL1 (moisture sensitivity level 1) classified according to IPC/JEDEC industry standard.
Note 2: Pocket position is relative to the sprocket hole measured as true position of the pocket,
not the pocket hole.
DIE MARKINGS
2015
YYYY
Die orientation dot
Part
Number
ZZZZ
Gate Pad solder bar
is under this corner
Laser Markings
Part #
Marking Line 1
Lot_Date Code
Marking line 2
Lot_Date Code
Marking Line 3
2015
YYYY
ZZZZ
EPC2015
A
DIE OUTLINE
f
d
X2
Solder Bar View
f
X9
3
4
5
6
7
8
9
10
A B c d e f g 11
c
B
2
DIM 1
e
g
MIN 4075 1602 1379 577 235 195 400 MICROMETERS Nominal 4105 1632 1382 580 250 200 400 MAX 4135 1662 1385 583 265 205 400 g
X8
SEATING PLANE
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2013 |
815 Max
100 +/- 20
(685)
Side View
| PAGE 5
eGaN® FET DATASHEET
RECOMMENDED
LAND PATTERN
EPC2015
The land pattern is solder mask defined.
Pad no. 1 is Gate;
(units in µm)
Pads no. 3, 5, 7, 9, 11 are Drain;
Pads no. 4, 6, 8, 10 are Source;
1362
560
X2
Pad no. 2 is Substrate.
180
X9
180
Efficient Power Conversion Corporation (EPC) reserves the right to make changes without further notice to any products herein to
improve reliability, function or design. EPC does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
eGaN® is a registered trademark of Efficient Power Conversion Corporation.
EPC – EFFICIENT POWER CONVERSION CORPORATION | WWW.EPC-CO.COM | COPYRIGHT 2013 |
Information subject to
change without notice.
Revised January, 2013
| PAGE 6